Infineon BSZ160N10NS3GATMA1: A 100V OptiMOS Power MOSFET for High-Efficiency Applications

The relentless pursuit of higher efficiency and power density in modern electronics drives the continuous innovation in power semiconductor technology. At the forefront of this evolution is Infineon's OptiMOS™ family, renowned for its exceptional performance. The BSZ160N10NS3GATMA1 stands as a prime example, a 100V N-channel power MOSFET engineered to set new benchmarks in a wide array of high-efficiency applications.

This device is built upon Infineon's advanced super-junction technology, which is the cornerstone of its superior performance. The most striking feature of the BSZ160N10NS3GATMA1 is its extremely low typical on-state resistance (R DS(on)) of just 1.6 mΩ. This minimal resistance is critical as it directly translates to reduced conduction losses. When the MOSFET is fully switched on, less power is wasted as heat, leading to significantly higher overall system efficiency. This allows designers to create more compact solutions without the need for extensive and bulky heat sinking.

Furthermore, the MOSFET boasts an outstanding figure-of-merit (FOM), achieved by optimizing the trade-off between R DS(on) and gate charge (Q G). A lower gate charge means the device can be switched on and off faster with less energy required to drive the gate itself. This results in markedly lower switching losses, which is a paramount advantage in high-frequency switching applications such as switch-mode power supplies (SMPS), DC-DC converters, and motor control systems. The ability to operate efficiently at higher frequencies enables the use of smaller passive components like inductors and capacitors, further increasing power density.

The 100V voltage rating makes this MOSFET an exceptionally versatile component. It is ideally suited for a broad spectrum of use cases, including:

Primary side switching in 48V input telecom and server power supplies.

Synchronous rectification in secondary sides of AC-DC converters.

Motor drive and control circuits in industrial automation, robotics, and e-mobility.

High-current DC-DC converters in computing and networking infrastructure.

Housed in a SuperSO8 package, the BSZ160N10NS3GATMA1 offers an excellent power-to-size ratio. This package type provides superior thermal performance compared to standard SO-8 packages, ensuring that the low R DS(on) can be maintained even under demanding operating conditions by effectively transferring heat away from the silicon die.

ICGOOODFIND: The Infineon BSZ160N10NS3GATMA1 is a top-tier 100V power MOSFET that excels by delivering a winning combination of minimal conduction and switching losses. Its industry-leading 1.6 mΩ R DS(on) and optimized switching characteristics make it a pivotal component for designers aiming to push the boundaries of efficiency, power density, and thermal performance in modern power conversion systems.

Keywords: OptiMOS, Low RDS(on), High-Efficiency, Power Density, SuperSO8