Infineon IKW75N60H3: A 600V, 75A High-Speed TRENCHSTOP™ IGBT3 for Robust Switching Applications
The demand for efficient and reliable power switching solutions continues to grow across industries such as industrial motor drives, renewable energy systems, and uninterruptible power supplies (UPS). Addressing this need, the Infineon IKW75N60H3 stands out as a high-performance Insulated Gate Bipolar Transistor (IGBT) engineered for robustness and efficiency in demanding applications.
This device is characterized by its 600V collector-emitter voltage rating and a high continuous collector current of 75A, making it suitable for high-power circuits. At the heart of its performance is Infineon's advanced TRENCHSTOP™ IGBT3 technology. This proprietary cell design significantly reduces saturation voltage (VCE(sat)), leading to markedly lower conduction losses compared to previous generations. The result is cooler operation and enhanced overall system efficiency.
A key feature of the IKW75N60H3 is its optimized for high-speed switching. The technology minimizes turn-off losses, which is crucial for applications operating at elevated switching frequencies. This allows for the design of smaller, more compact magnetic components and filters, reducing both the system's size and cost. Furthermore, the device offers an excellent trade-off between low saturation voltage and switching losses, providing designers with flexibility to optimize for their specific application needs.
Robustness is a cornerstone of this component's design. It features a positive temperature coefficient,
which prevents thermal runaway and simplifies the paralleling of multiple devices for even higher power outputs. The short-circuit ruggedness ensures the IGBT can withstand stressful fault conditions for the specified time, thereby increasing system reliability and longevity. The integrated anti-parallel emitter-controlled diode further enhances its switching capabilities and provides reverse recovery behavior that is soft and well-controlled.
Housed in a TO-247 package, the IKW75N60H3 offers low thermal resistance and is designed for easy mounting onto heatsinks, facilitating effective thermal management in high-power environments.
ICGOOODFIND: The Infineon IKW75N60H3 is a superior high-power switching device that combines high current capability, low losses, and exceptional ruggedness. Its use of TRENCHSTOP™ IGBT3 technology makes it an ideal choice for engineers designing efficient, reliable, and compact systems for industrial and energy applications.
Keywords: TRENCHSTOP™ IGBT3, High-Speed Switching, Low Conduction Losses, Short-Circuit Ruggedness, 600V/75A Rating
